Effective spin current manipulation is the key process to realize the spin-based transistor and unfortunately proved to be quite challenging in the electron-based spin channels, in which the propagation of spin current relies on the isotropic electron diffusion. Recent works show that spin can transmit through antiferromagnetic insulators [1,2], in which itinerant electrons cannot pass, indicating alternative methods for spin manipulation. In this talk, the speaker will introduce their recent progress in the effective manipulation of spin current in antiferromagnetic insulator with the methods different from those in conductive materials. The spin current switching by the phase and magnetic structure control will be discussed, with the introduction of two novel concepts: spin colossal magnetoresistance and nematic spin transmission in antiferromagnetic insulator[3-6]. These findings pave the road towards antiferromagnetic-insulator-based spin transistor and memory.
 C. Hahn et al., EPL (Europhysics Letters) 108, 57005 (2014).
 H. Wang, C. Du, P. C. Hammel, and F. Yang, Physical review letters 113, 97202 (2014)
 Zhiyong Qiu, Jia Li, Dazhi Hou* et al., Spin-current probe for phase transition in an insulator. Nature Communications 7, 12670 (2016).
 Zhiyong Qiu, Dazhi Hou* et al., accepted by Nature Materials.
 Dazhi Hou et al., under review
 Dazhi Hou. et al., Physical Review Letters 118, 147202 (2017).
Dazhi Hou received the bachelor degree and PHD of physics from the physics department of Fudan University in 2007 and 2013. After the PHD graduation, he first worked as a research associate in Tohoku University, Japan, and was promoted to be an assistant professor in 2017. Dr. Hou studied the experimental scaling of the anomalous Hall effect in ferromagnetic metals and the spin transport in crystalline and glass system. His recent research interest is the control and manipulation of spin current in antiferromagnetic materials.