Abstract: After more than 20 years’ development, spin-transfer-torque magnetic random access memory (STT-MRAM) has emerged as one of the most promising emerging main stream memory technology, due to its non-volatility, fast read and write time, small size, infinite endurance and compatibility with CMOS technology. There are still many remaining challenges for successful long-term commercialization as a disruptive memory technology. Its key element, the magnetic tunneling junction, has been reduced to 10nm in thickness and dominated by atomic layer engineered metal-oxide; 3d-5d-metal interfaces, in attempt to enhance tunneling magnetoresistance and to reduce the critical switching current while maintaining thermal stability. In this talk, we will review the recent progress of STT-MRAM and its underline interfacial magnetism with emphasis on our work on the interface effects on interlayer exchange coupling through ultrathin MgO, the electric field effect on ferromagnetic/antiferromagnetic coupling of synthetic antiferromagnetic layer and interfacial magnetic disorder modification of spin seebeck effect. Finally, the breakinglimitation of spin angular moment transfer (larger than ℏ transfer for single electron refection) at the interface of normal metal and magnetic insulator.
Address: University of Science and Technology of China, No.96, JinZhai Road Baohe District, Hefei, Anhui, 230026, P.R.China.