Detail:

Abstract:
　　Strain engineering has been developed as a well-established approach to enhance the performance of electronic devices, a key to the modern CMOS technology. On the other hand, strain engineering has been a continuously self-reviving approach employed in a wide range of research areas. In this talk, I will first review some of our “old” works on strain induced self-assembly of nanostructures in heteroepitaxial growth of thin films, in particular through strain partitioned nanomechanical architecture, and on strain engineered electronic properties of 2D materials. Then I will introduce our latest “new” study of strain engineering of spins via mechanical bending of a topological nanofilm, which we named “topological nanomechanical architectiure”. This novel approach affords a promising route towards realization of robust spin injectors with 100% spin polarization and large spin current density.