Detail:

Abstract:
　　Low power is desirable for battery-powered electronics, such as mobile phone and internet of things (IOTs) devices etc. Spintronics is considered as an emerging technology that can offer this property based on its data non-volatility/fast operation/easy integration with CMOS. And spin transfer torque random access memory (STT-MRAM) has attracted much attention from academics and industries field. However, this technology has met some challenges in term of switching power, data stability and density etc. Spin orbit engineering may contribute of its improvement and this paper will give four examples: 1) heavy metal with strong spin orbit coupling for strong perpendicular magnetic anisotropy (PMA); 2) assistance of Spin-Hall Effect for fast Spin Transfer Torque; 3) Skyrmion racetrack memory with voltage control pinning; 4) all spin logic with weak spin orbit coupling channel. These could allow a full spin computing system with ultra-low power in the future.

Biosketch：
　　Prof. Weisheng Zhao received the Ph.D. degree in physics from University of Paris Sud, Paris, France, in 2007. He worked as a Research Associate at the CEA's embedded computing laboratory, France, from 2007 to 2009, and at the French national research center (CNRS), France, as a tenured scientist from 2009 to 2014 where he led the spintronics integration group. Now he is a professor (Youth 1000 Plan from 2013) and director of Fert Beijing Research Institute in Beihang University, Beijing, China. He has authored or coauthored 2 books, more than 200 scientific papers in the leading journals such as Nature Communications, Advanced Materials, and Proceedings of the IEEE, he also holds more than 50 Chinese patents. Prof. Zhao is the associated editor of IEEE Transactions on Nanotechnology and IET Electronics Letters.